Nanoscale Devices: Physics, Modeling, and Their ApplicationThe primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. . Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to optimizing the sub-nanometer device performance and addresses simulation aspect and/or fabrication process of devices
Also, includes design problems at the end of each chapter |
Contents
Effect of Ground Plane and Strained Silicon on Nanoscale FET Devices | 3-1 |
Structures | 3-18 |
Operational Characteristics of Vertically Diffused Metal Oxide Semiconductor Field Effect | 4-23 |
Modeling of DoubleGate MOSFETs | 5-18 |
TFETs for Analog Applications | 5-33 |
Design and Investigations | 7 |
Modeling of Graphene Plasmonic Terahertz Devices | 21 |
Analysis of CNTFET for SRAM Cell Design | 9-31 |
Overview and Outlook | 11-30 |
A Fundamental Overview of High Electron Mobility Transistor and Its Applications | 11-44 |
SpintronicBased Memory and Logic Devices | 13-23 |
Fundamentals Modeling and Application of Magnetic Tunnel Junctions | 13-56 |
Underlying Physics SPICE Modeling and Circuit Applications | 13-71 |
Evaluation of Nanoscale Memristor Device for Analog and Digital Application | 16-17 |
10 | |
Design of Ternary Logic Circuits Using CNFETs | 10-19 |
Other editions - View all
Nanoscale Devices: Physics, Modeling, and Their Application Brajesh Kumar Kaushik Limited preview - 2018 |
Nanoscale Devices: Physics, Modeling, and Their Application Brajesh Kumar Kaushik No preview available - 2020 |
Nanoscale Devices: Physics, Modeling, and Their Application Brajesh Kumar Kaushik No preview available - 2018 |
Common terms and phrases
applications barrier BTBT capacitance carbon nanotube cell channel length characteristics chirality CMOS CNTFET computing conduction density depletion DG-MOSFETs DIBL dielectric dopant doping concentration drain current drift region electric field Equation fabricated ferromagnetic field effect transistor FinFET FPGA frequency function gate length gate oxide gate voltage graphene graphene-based ground plane HEMT IEEE IEEE Electron Device IEEE Trans IEEE Transactions implementation increase input interface intrinsic magnetic tunnel junctions material memory memristor metal mobility MOSFET MRAM nanoscale nanowire noise on-resistance on-state operation output P-well region parameters performance Phys plasmonic Point TFETs potential R. F. DeMara reduced resistance RRAM semiconductor SHE-MTJ short-channel effects shown in Figure silicon carbide simulation spacer SPICE model spin Hall spintronic SRAM strain strained silicon substrate bias subthreshold switching temperature ternary logic thermal thin-film transistors threshold voltage UMOSFET structure values variation VDMOSFET waveguide width