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Electron Beam Lithography
Pattern Replication Technology
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aberration accuracy aperture bit line cathode CD CD channel characteristics chip circuit crystal current density CZ-grown decrease defects deflector delineator developed device diameter dielectric isolation dislocation distortion distribution doping drain DSA MOS transistor dynamic effect electron beam electron gun electron-optical electrostatic lens emission energy epitaxial etch-rate ratio exposure fabrication Figure film function gettering growth heat treatment high-speed impurity increase input integrated circuits integration interface ion implantation laser laser annealing layer lens line width lithography logic magnetic mask measured memory cell metal method minimum mode MOS transistor NEC Corporation objective lens obtained operation optical oxygen photomask plasma etching polysilicon position problems reduced region resist pattern sample scanning shown shows signal silicon speed sputtering stage structure substrate technique temperature thermal thickness threshold voltage tion VLSI voltage wafer warpage wavelength X-ray X-ray lithography