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Electron Beam Lithography
Pattern Replication Technology
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aberration accuracy aperture bit line cathode channel characteristics chip circuit crystal current density decrease defects delineator developed device diameter dielectric isolation dislocation distortion distribution doping drain DSA MOS transistor effect electron beam electron gun electrostatic lens emission epitaxial etch-rate ratio exposure fabrication Figure film function gate gettering growth heat treatment high-speed impurity increase input integrated circuits integration interface ion implantation laser laser annealing layer lens line width lithography logic magnetic mask measured memory cell metal method minimum mode MOS transistor NEC Corporation objective lens obtained operation optical oxide oxygen pattern data photocathode photomask Phys plasma etching polysilicon position region resist pattern sample scanning semiconductor shown shows signal silicon speed sputtering stage substrate technique temperature thermal thickness threshold voltage tion VLSI voltage wafer warpage wavelength X-ray X-ray lithography