VLSI Technology: Fundamentals and ApplicationsYasuo Tarui |
Contents
Introduction | 1 |
Electron Beam Lithography | 8 |
b Delineation of Figures Over the Surface of | 39 |
Copyright | |
10 other sections not shown
Other editions - View all
Common terms and phrases
aberration accuracy aperture bit line capacitor cathode characteristics chip circuit crystal current density decrease defects deflector delineator developed device diameter dielectric isolation dislocation distortion distribution doping drain DSA MOS transistor effect electron beam electron gun electron-optical electrostatic lens emission energy epitaxial etch-rate ratio exposure fabrication Figure film function gettering growth heat treatment high-speed impurity increase input inspection integrated circuits interface ion implantation laser laser annealing layer lens line width lithography logic magnetic mask measurement memory cell metal method minimum mode MOS transistor objective lens obtained operation optical oxygen pattern data photocathode photomask plasma etching polysilicon position reduced region resist pattern sample scanning shown shows signal silicon SiO2 speed stage structure substrate technique temperature thermal thickness threshold voltage tion VLSI voltage wafer warpage wavelength X-ray X-ray lithography