Integrated Circuit Engineering: Design, Fabrication, and Applications

active amplifier applications approximately assumed base bonding capacitance capacitor cell Chapter characteristic charge chip clock collector components concentration conductivity considered constant defects defined density depends depletion deposition described determined device dielectric difference differential diffusion diode distribution doped effect electron emitter energy epitaxial equation equivalent etching EXAMPLE failure film final frequency function gain gate given Hence impurity increases input integrated circuits inverter isolation layer limit load logic material measured memory metal mode Note obtained occurs operational operational amplifier output oxide p-type parameters pattern performance positive produce range ratio reduced region resistance resistor result saturation shown in Fig shows signal silicon Solution spacing step structure substrate surface temperature thickness tion transfer transistor typically usually voltage wafer width yield zero