VLSI Technology: Fundamentals and ApplicationsYasuo Tarui |
Contents
Introduction | 1 |
Electron Beam Lithography | 8 |
b Fundamental Pattern Data Processing Operations | 66 |
Copyright | |
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alignment Appl bit line capacitor carbon concentration cathode characteristics chip circuit CZ-grown decrease defects delineator device diameter dielectric isolation diffusion dislocation distribution doping drain DSA MOS transistor dust particles dynamic electric electron beam electron gun energy epitaxial Etch rate etch-rate ratio exposure fabrication field Figure film Fourier transform spectroscopy function gate oxide gettering heat treatment IEEE impurity increase input inspection integrated circuits interface ion implantation Japanese laser laser annealing layer lens logic mask measurement memory cell metal method minimum mode MOS transistor obtained operation optical oxygen photomask Phys plasma etching polysilicon Proc reduced region resist pattern sample scanning semiconductor shown shows signal silicon SiO2 speed Springer sputtering substrate susceptor Tarui technique Technol temperature thickness threshold voltage tion VLSI voltage wafer warpage width X-ray